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| DHigh Speed GaAlAs Infrared Emitter OPE5885 The OPE5885 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1 package and has medium beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. FEATURES * High speed : 25ns rise time * 850nm wavelength * Medium beam angle * Low forward voltage * High power and high reliability * Available for pulse operating APPLICATIONS * Emitter of IrDA * IR Audio and Telephone * High speed IR communication * IR LANs * Available for wireless digital data transmission DIMENSIONS (Unit : mm) 3.0 3.8 4.6 0.3 5.4 0.8 Max 20.5 23.0 Min Anode Cathode Tolerance : 0.2mm STORAGE * Condition : 5C~35C,R.H.60% * Terms : within 3 months from production date * Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS Item Symbol Rating Power Dissipation PDC 80 Forward current IFC 60 CCCCCC Pulse forward current IFPC 0.5 Reverse voltage VRC 4.0 Operating temp. Topr. -20~ +70 Tsol. 240. Soldering temp. CCCCCCCCCCCCCCC 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICAL CHARACTERISTICS Item Symbol Forward voltage VFC Reverse current IRC Capacitance Ct Radiant intensity Ie Peak emission wavelength pC Spectral bandwidth 50% C Half angle Optical rise & fall time(10%~90%) Cut off frequency *3 *3 2.0 2.5 (Ta=25) Unit C EC AC C CC CC Conditions IF=50 EC VR=4VC f=1 C IF=50 EC IF=50 EC IF=50 C IF=40 C IF=50 C IF D ECEEC DD EC C Min. C C 20 C C C C C Typ. 1.5 C 20 40 850 45 17 25/13 14 Max. 2.0 10 C C C C C C (Ta=25) Unit V EC C / C C deg. ns MHz tr/tf fc . 10logPo(fc MHz)/Po(0.1 MHz)=-3 9 High Speed GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. 200 100 50 30 10 5 3 1 0.5 0.3 0.1 0 20 40 60 80 Ambient Temperature Ta() 100 OPE5885 RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25 Ta=25 100 80 60 40 20 0 -20 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. IF=50mA 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 1.0 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25 0.8 0.6 0.4 0.2 0.0 700 Ambient Temperature Ta() FORWARD CURRENT Vs. FORWARD VOLTAGE Ta=25 750 800 850 900 950 Emission Wavelength (nm) 100 50 30 20 10 5 4 3 2 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 -20 -10 0 10 20 -30 -40 -50 -60 -70 -80 -90 1.0 30 40 50 60 70 80 90 1.0 1 1.0 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 0.5 0 0.5 Relative Radiant intensity 10 |
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